050-7040 rev d 4-2006 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s apt10078bfll apt10078sfll 1000v 14a 0.780 ?? ?? ? fredfet power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 7a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1000 0.780 250 1000 100 35 apt10078bfll_sfll 1000 1456 3040 403 3.23 -55 to 150 300 1430 1300 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package fast recovery body diode to-247 d 3 pak bfll sfll downloaded from: http:///
050-7040 rev d 4-2006 dynamic characteristics apt10078bfll_sfll source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = i d -14a) peak diode recovery dv / dt 5 reverse recovery time(i s = i d -14a, di / dt = 100a/s) reverse recovery charge(i s = i d -14a, di / dt = 100a/s) peak recovery current(i s = i d -14a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 1456 1.3 18 t j = 25c 210 t j = 125c 710 t j = 25c 1.0 t j = 125c 3.6 t j = 25c 9.8 t j = 125c 14 symbol r jc r ja min typ max 0.31 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 14a @ 25c resistive switching v gs = 15v v dd = 500v i d = 14a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 667v v gs = 15v i d = 14a, r g = 3 ? inductive switching @ 125c v dd = 667v v gs = 15v i d = 14a, r g = 3 ? min typ max 2525 430 7595 12 60 98 30 9 355 75 740 95 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 13.27mh, r g = 25 ? , peak i l = 14a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s i d - 14a di / dt 700a/s v r 1000 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7040 rev d 4-2006 apt10078bfll_sfll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 1 0 0 5 1 01 52 02 53 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 5.5v 6v 6.5v 7v 5v v gs =15 & 8v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 6050 40 30 20 10 0 1412 10 86 4 2 0 2.52.0 1.5 1.0 0.5 0.0 3025 20 15 10 50 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 normalized to v gs = 10v @ 0.5 i d = 7a i d = 0.5 i d = 7a v gs = 10v 0.02580.107 0.177 0.00295f0.0114f 0.174f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
050-7040 rev d 4-2006 apt10078bfll_sfll v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 10,000 1000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 5610 51 .1 1612 84 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 14a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 667v r g = 3 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 667v r g = 3 ? t j = 125c l = 100h 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 30 v dd = 667v r g = 3 ? t j = 125c l = 100h e on includes diode reverse recovery. 6050 40 30 20 10 0 14001200 1000 800600 400 200 0 v dd = 667v i d = 14a t j = 125c l = 100h e on includes diode reverse recovery. 5040 30 20 10 0 1000 800600 400 200 0 downloaded from: http:///
050-7040 rev d 4-2006 apt10078bfll_sfll typical performance curves apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df100 v ce fi g ure 20 , inductive switchin g test circuit v dd g switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% downloaded from: http:///
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